| PART |
Description |
Maker |
| 2SB065030MLJY |
2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS
2SB065030MLJY SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB154060ML |
SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB154040ML |
SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB183060MA |
LOW IR SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB166100MA |
LOW IR SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| 2SB035030MLJY |
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| CD6916 |
SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION
|
Compensated Deuices Inc...
|
| 2SB030070MLJY |
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
|
Silan Microelectronics Joint-stock
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KDR393S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR393 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
